07 June 2021 GaN Wide Bandgap Semiconductor Enabling 1200V and Beyond Power Switches, Now Commercially Available for 200 mm Large Scale Manufacturing WASHINGTON - The U.S. Naval Research Laboratory’s gallium nitride (GaN) wafers, also called large-area engineered substrates, can enable GaN to potentially be a displacement technology for silicon semiconductors used in microelectronics, particularly in power electronics...